Hole diffusion profile in a p-p+ silicon homojunction determined by terahertz and midinfrared spectroscopic ellipsometry
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چکیده
Hole diffusion profile in a p-p+ silicon homojunction determined by terahertz and midinfrared spectroscopic ellipsometry" (2009). Faculty Publications from Nebraska Center for Materials and Nanoscience. Paper 99.
منابع مشابه
Free-charge carrier profile of iso- and aniso-type Si homojunctions determined by terahertz and mid-infrared ellipsometry
Available online 10 December 2010
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تاریخ انتشار 2013